2009. 11. 17 1/4 semiconductor technical data 2N7000 n channel enhancement mode field effect transistor revision no : 2 interface and switching application. features high density cell design for low r ds(on) . voltage controlled small signal switch. rugged and reliable. high saturation current capablity. maximum rating (ta=25 ) to-92 dim millimeters a b c d f g h j k l 4.70 max 4.80 max 3.70 max 0.45 1.00 1.27 0.85 0.45 14.00 0.50 0.55 max 2.30 d 1 2 3 b a j k g h f f l e c e c m n 0.45 max m 1.00 n 1. source 2. gate 3. drain + _ characteristic symbol rating unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v drain current continuous i d 500 ma pulsed (note 1) i dp 2000 drain power dissipation p d 625 mw junction temperature t j 150 storage temperature range t stg -55 150 d g s equivalent circuit note 1) pulse width 10 , duty cycle 1% electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit drain-source breakdown voltage bv dss v gs =0v, i d =10 a 60 - - v zero gate voltage drain current i dss v ds =60v, v gs =0v - - 1 a gate-body leakage, forward i gssf v gs =20v, v ds =0v - - 100 na gate-body leakage, reverse i gssr v gs =-20v, v ds =0v - - -100 na please handle with caution. this transistor is electrostatic sensitive device.
2009. 11. 17 2/4 2N7000 revision no : 2 electrical characteristics (ta=25 ) on characteristics (note2) characteristic symbol test condition min. typ. max. unit gate threshold voltage v th v ds =v gs , i d =250 a 1.1 1.8 2.3 v drain-source on resistance r ds(on) v gs =10v, i d =500ma - 1.2 1.8 v gs =5v, i d =50ma - 1.5 2.1 drain-source on voltage v ds(on) v gs =10v, i d =500ma - 0.6 0.9 v v gs =5v, i d =50ma - 0.075 0.105 on state drain current i d(on) v gs =10v, v ds = 2 v ds(on) 500 - - ma forward transconductance g fs v ds =10v, i d =500ma 200 580 - ms drain-source diode forward voltage v sd v gs =0v, i s =200ma (note1) - 0.78 1.15 v dynamic characteristics characteristic symbol test condition min. typ. max. unit input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 47.1 - pf reverse transfer capacitance c rss - 3.5 - output capacitance c oss - 8.8 - switching time turn-on time t on v dd =30v, r l =155 , i d =190ma, v gs =10v - 8.8 - ns turn-off time t off - 14.8 - out output, v 10% 10% 10% 90% 90% 90% 50% 50% f t r t in input, v inverted pulse width d(on) t d(off) t on t off t switching time test circuit gs v v dd r l v out dut d g s in v (note 2) pulse test : pulse width 80 , duty cycle 1%
2009. 11. 17 3/4 2N7000 revision no : 2 drain-source voltage v (v) drain current i (a) d 0 ds 0 i - v dds 1 common source ta=25 c v =3v gs 2345 0.3 0.6 0.9 1.5 1.2 4v 5v 6v 10v gate-source voltage v (v) drain current i (a) d gs i d - v gs 0.1 0 0.2 common source ta=25 c 0.3 0.4 0.5 0.6 2 1 3 4 6 5 0 0.0 1 2345 0.6 0.3 0.9 drain source on- resistancer r ds(on) ( ?) drain current i (a) d r - i ds(on) d 0 2 1 3 4 5 drain source on- resistance r ds ( ?) junction temperature t ( c) j r - t ds(on) j 0.6 common source v ds =v gs i d =250 a 1 0.8 1.2 1.4 junction temperature t ( c) j v - t th j 25 c -55 c 125 c common source v gs =10v body diode forward voltage v (v) reverse drain current i (a) s sd i - v ssd 0.01 0.0 0.1 1 0.3 0.6 0.9 1.2 1.5 v gs =10 v gs =0 -100 0 50 100 -50 150 -100 0 50 100 -50 150 v gs =3v 6v 5v 10v 4v v gs =10v i d =500ma v gs =5v i d =50ma normalized gate source threshold voltage vth (v)
2009. 11. 17 4/4 2N7000 revision no : 2 drain-source voltage v (v) capacitance c (pf) 01015 520 c - v ds 25 ds 1 10 1000 100 gate charge q (nc) gate-source voltage v (v) gs g v - q gs g 0 0 2 common source v gs =30v i d = 0.3a 46810 4 2 6 8 10 ciss coss crss common source ta=25 f=1mhz v gs =0 c ta =25 c p - ta d ambient temperature ta ( c) 02550 d 0 drain power dissipation p (mw) 75 100 125 150 175 100 500 300 200 600 400 700 soa ds drain-source voltage v (v) drain current i (a) d 0.001 0.01 10 100 1 0.1 10 0.0001 0.001 0.01 0.1 1 pw =100ms pw =1ms dc pw =10ms tj=150 , ta=25 ,single pulse c c pw 10
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